products and specifications discussed herein ar e subject to change by micron without notice. 512mb : x32 twindie mobile sdram addendum features pdf: 09005aef817f1b8c/source: 09005aef818112f1 micron technology, inc., reserves the right to change products or specifications without notice. 512mb mobile sdram_twindie_x32.fm - rev. c 6/05 en 1 ?2004 micron technology, inc. all rights reserved. mobile sdram mt48lc16m32l2 ? 4 meg x 32 x 4 banks mt48v16m32l2 ? 4 meg x 32 x 4 banks mt48h16m32l2 ? 4 meg x 32 x 4 banks features ? low voltage power supply ? partial array self refresh power-saving mode ? temperature compensated self refresh (tcsr) ? deep power-down mode ? programmable output drive strength ? fully synchronous; all signals registered on positive edge of system clock ? internal pipelined operat ion; column address can be changed every clock cycle ? internal banks for hiding row access/precharge ? programmable burst lengths: 1, 2, 4, 8, or full page ? auto precharge, includes concurrent auto precharge, and auto refresh modes ? self refresh mode; standard and low power ? 64ms, 8,192-cycle refresh ? lvttl-compatible inputs and outputs ? operating temperature range ? industrial (-40c to +85c) ? supports cas latency of 1, 2, 3 options marking ?v dd /v dd q 3.3v/3.3v lc 2.5v/2.5v v 1.8v/1.8v h ?configuration 16m32 stacked die l2 ? package/ballout plastic package 90-ball fbga (8mm x 13mm) (standard) f5 plastic package 90-ball fbga (8mm x 13mm) (lead-free) b5 ? timing (cycle time) 8ns at cl3 (125 mhz) -8 10ns at cl3 (100 mhz) -10 ?temperature commercial (0c to +70c) no marking industrial (-40c to +85c) it addendum changes the standard 256mb sdram mobile x32 data sheets should be referenced for a complete description of sdram functionality and operating modes. this addendum data sheet will concentrate on the key dif- ferences required to support the enhanced options of the twindie configuration. the micron 256mb mobile x32 data sheet provides full specifications and functionality unless specified herein. table 1: key timing parameters speed grade clock frequency access time at cl = 3 access time at cl = 2 -8 125 mhz 7.5ns 8.5ns -10 100 mhz 7.5ns 8.5ns table 2: configuration architecture 16 meg x 32 configuration 4 meg x 32 x 4 banks refresh count 8k row addressing 8k (a0?a12) bank addressing 4 (ba0, ba1) column addressing 512 (a0?a8)
pdf: 09005aef817f1b8c/source: 09005aef818112f1 micron technology, inc., reserves the right to change products or specifications without notice. 512mb mobile sdram_twindie_x32.fm - rev. c 6/05 en 2 ?2004 micron technology, inc. all rights reserved. 512mb : x32 twindie mobile sdram addendum general description general description the 512mb sdram is a high-speed cmos, dy namic random-access memory containing 536,870,912 bits. it is internally configured by stacking two 256mb, 8 meg x 32 devices. each of these 256mb devices is configured as a quad bank dram with a synchronous interface. they are organized with 32 dqs with 4 banks of 67,108,864 bits, comprising of 8,192 rows by 512 columns by 32 bits wide. read and write accesses to the sdram are bu rst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. accesses begin with the registration of an active command, which is then followed by a read or write command. the address bits registered coincident with the active command are used to select the bank and row to be accessed (ba0, ba1 select the bank; a0-a12 select the row). the address bits registered coincident with the read or write command are used to select the star ting column location for the burst access. the sdram provides for programmable read or write burst lengths of 1, 2, 4, or 8 locations, or the full page, with a burst te rminate option. an auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. the 512mb sdram uses an internal pipelined architecture to achieve high-speed opera- tion. this architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access. precharging one bank wh ile accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access opera- tion. the 512mb sdram is designed to operate in 3.3v, 2.5v, and 1.8v memory systems. an auto refresh mode is provided, along with a power-saving, power-down mode. all inputs and outputs are lvttl-compatible. sdrams offer substantial advances in dram operating performance, including the abil- ity to synchronously burst data at a high data rate with automatic column-address gen- eration, the ability to interleave between in ternal banks to hide precharge time, and the capability to randomly change column addresses on each clock cycle during a burst access. prior to normal operation, the sdram must be initialized. the following sections pro- vide detailed information covering die intitialization, register definition, command descriptions, and device operation on a per die basis unless otherwise noted. this addendum documents any variances fo r the 512mb: x32 mobile sdram from the 256mb: x32 mobile sdra m specification. please refer to the 256mb: x32 mobile sdram data sheet on micron?s web site for addi tional details on the part functionality. commands auto refresh auto refresh is used during normal operation of the sdram and is analogous to cas#-before-ras# (cbr) refresh in conv entional drams. this command is non- persistent, so it must be issued each time a refresh is required. all active banks must be precharged prior to issuing a auto refresh command. the auto refresh com- mand should not be issued until the minimum t rp has been met after the precharge command as shown in the operations section. the addressing is generated by the internal refresh controller. this makes the address bits ?don?t care? during an auto refresh command. the 512mb twindie? mobile sdram requires 8,192 auto refresh cycles every 64ms ( t ref). providing a distributed
pdf: 09005aef817f1b8c/source: 09005aef818112f1 micron technology, inc., reserves the right to change products or specifications without notice. 512mb mobile sdram_twindie_x32.fm - rev. c 6/05 en 3 ?2004 micron technology, inc. all rights reserved. 512mb : x32 twindie mobile sdram addendum commands auto refresh command every 7.81s will meet the refresh requirement and ensure that each row is refreshed. alternatively, 8,192 auto refresh commands can be issued in a burst at the minimum cycle rate ( t rc), once every 64ms. figure 1: functional block diagram command dq0-dq31 cs clk cke# addresses top die bottom die
pdf: 09005aef817f1b8c/source: 09005aef818112f1 micron technology, inc., reserves the right to change products or specifications without notice. 512mb mobile sdram_twindie_x32.fm - rev. c 6/05 en 4 ?2004 micron technology, inc. all rights reserved. 512mb : x32 twindie mobile sdram addendum ball assignment ball assignment figure 2: 90-ball fbga assignment 1234 6789 5 dq26 dq28 v ss q v ss q v dd q v ss a4 a7 clk dqm1 v dd q v ss q v ss q dq11 dq13 dq24 v dd q dq27 dq29 dq31 dqm3 a5 a8 cke nc dq8 dq10 dq12 v dd q dq15 v ss v ss q dq25 dq30 nc a3 a6 a12 a9 nc v ss dq9 dq14 v ss q v ss v dd v dd q dq22 dq17 nc a2 a10 nc ba0 cas# v dd dq6 dq1 v dd q v dd dq21 dq19 v dd q v dd q v ss q v dd a1 a11 ras# dqm0 v ss q v dd q v dd q dq4 dq2 dq23 v ss q dq20 dq18 dq16 dqm2 a0 ba1 cs# we# dq7 dq5 dq3 v ss q dq0 a b c d e f g h j k l m n p r ball and array
pdf: 09005aef817f1b8c/source: 09005aef818112f1 micron technology, inc., reserves the right to change products or specifications without notice. 512mb mobile sdram_twindie_x32.fm - rev. c 6/05 en 5 ?2004 micron technology, inc. all rights reserved. 512mb : x32 twindie mobile sdram addendum electrical specifications electrical specifications table 3: dc electrical characteristics and operating conditions (lc version) v dd /v dd q = +3.3v 0.3v notes: 1, 5, 6; please refer to the 256mb: x32 mobile sd ram data sheet for all notes. parameter/condition symbol min max units notes supply voltage v dd /v dd q 33.6v input high voltage: logic 1; all inputs v ih 0.8 x v dd q v dd + 0.3 v22 input low voltage: logic 0; all inputs v il -0.3 0.3 v 22 input leakage current: any input 0v v in v dd (all other balls not under test = 0v) i i -5 5 a output leakage current: dqs are disabled; 0v v out v dd q i oz -5 5 a output levels: output high voltage (i out = -4ma) v oh v dd q - 0.2 ? v output low voltage (i out = 4ma) v ol ?0.2v table 4: dc electrical characteristics and operating conditions (v version) v dd = +2.5v 0.2v v dd q = +2.5v 0.2v or v dd q = +1.8v 0.15v notes: 1, 5, 6; please refer to the 256mb: x32 mobile sd ram data sheet for all notes. parameter/condition symbol min max units notes supply voltage v dd /v dd q 2.3 2.7 v input high voltage: logic 1; all inputs v ih 0.8 x v dd q v dd q + 0.3 v22 input low voltage: logic 0; all inputs v il -0.3 0.3 v 22 input leakage current: any input 0v v in v dd (all other balls not under test = 0v) i i -3.0 3.0 a output leakage current: dqs are disabled; 0v v out v dd q i oz -3.0 3.0 a output levels: output high voltage (i out = -4ma) v oh 0.9 x vddq ? v output low voltage (i out = 4ma) v ol ?0.2v
pdf: 09005aef817f1b8c/source: 09005aef818112f1 micron technology, inc., reserves the right to change products or specifications without notice. 512mb mobile sdram_twindie_x32.fm - rev. c 6/05 en 6 ?2004 micron technology, inc. all rights reserved. 512mb : x32 twindie mobile sdram addendum electrical specifications table 5: dc electrical characteristics and operating conditions (h version) v dd = +1.8v 0.1v v dd q = +1.8v 0.1v notes: 1, 5, 6; please refer to the 256mb: x32 mobile sd ram data sheet for all notes. parameter/condition symbol min max units notes supply voltage v dd /v dd q 1.7 1.9 v input high voltage: logic 1; all inputs v ih 0.8 x v dd q v dd q + 0.3 v22 input low voltage: logic 0; all inputs v il -0.3 0.3 v 22 input leakage current: any input 0v v in v dd (all other balls not under test = 0v) i i -1.0 1.0 a output leakage current: dqs are disabled; 0v v out v dd q i oz -1.5 1.55 a output levels: output high voltage (i out = -4ma) v oh 0.9 x vddq ? v output low voltage (i out = 4ma) v ol ?0.2v ta bl e 6 : i dd specifications and conditions (lc version) v dd = +3.3v 0.3v, v dd q = +3.3v 0.3v notes: 1, 5, 6, 11, 13; please refer to the 256mb: x32 mobile sdram data sheet for all notes. max parameter/condition symbol -8 -10 units notes operating current: active mode; burst = 2; read or write; t rc = t rc (min) i dd1 210 185 ma 3, 18, 19, 28 standby current: power-down mode; all banks idle; cke = low i dd 2n 800 800 a 32 standby current: power-down mode; all banks idle; cke = high i dd 2ns 60 60 ma standby current: active mode; cke = high; cs# = high; all banks active after t rcd met; no accesses in progress i dd 3ns 80 80 ma 3, 12, 19, 28 standby current: ac tive mode; cke = low; cs# = high; all banks active; no accesses in progress i dd 3n 60 60 ma operating current: burst mode ; continuous burst; read or write; all banks active, half dqs toggling every cycle. i dd 4 165 140 ma 3, 18, 19, 28 auto refresh current cke = high; cs# = high t rfc = t rfc (min) i dd 5 300 250 ma 3, 12, 18, 19, 28, 29 t rfc = 7.8s i dd 65.05.0ma deep power down i zz 20 20 a
pdf: 09005aef817f1b8c/source: 09005aef818112f1 micron technology, inc., reserves the right to change products or specifications without notice. 512mb mobile sdram_twindie_x32.fm - rev. c 6/05 en 7 ?2004 micron technology, inc. all rights reserved. 512mb : x32 twindie mobile sdram addendum electrical specifications ta bl e 7 : i dd specifications and conditions (v version) v dd = +2.5 0.2v, v dd q = +2.5 0.2v notes: 1, 5, 6, 11, 13; please refer to the 256mb: x32 mobile sdram data sheet for all notes. max parameter/condition symbol -8 -10 units notes operating current: active mode; burst = 2; read or write; t rc = t rc (min) i dd1 210 185 ma 3, 18, 19, 28 standby current: power-down mode; all banks idle; cke = low i dd 2n 800 800 a 32 standby current: power-down mode; all banks idle; cke = high i dd 2ns 60 60 ma standby current: active mo de; cke = high; cs# = high; all banks active after t rcd met; no accesses in progress i dd 3ns 80 80 ma 3, 12, 19, 28 standby current: active mode; cke = low; cs# = high; all banks active; no accesses in progress i dd 3n 60 60 ma operating current: burst mo de; continuous burst; read or write; all banks active, half dqs toggling every cycle. i dd 4 165 140 ma 3, 18, 19, 28 auto refresh current cke = high; cs# = high t rfc = t rfc (min) i dd 5 300 250 ma 3, 12, 18, 19, 28, 29 t rfc = 7.8s i dd 65.05.0ma deep power down i zz 20 20 a ta bl e 8 : i dd specifications and conditions (h version) v dd = 1.8 0.1v, v dd q = 1.8v 0.1v notes: 1, 5, 6, 11, 13; please refer to the 256mb: x32 mobile sdram data sheet for all notes. max parameter/condition symbol -8 -10 units notes operating current: active mode; burst = 2; read or write; t rc = t rc (min) i dd1 155 130 ma 3, 18, 19, 28 standby current: power-down mode; all banks idle; cke = low i dd 2n 600 600 a 32 standby current: power-down mode; all banks idle; cke = high i dd 2ns 40 40 ma standby current: ac tive mode; cke = high; cs# = high; all banks active after t rcd met; no accesses in progress i dd 3ns 60 60 ma 3, 12, 19, 28 standby current: ac tive mode; cke = low; cs# = high; all banks active; no accesses in progress i dd 3n 40 40 ma operating current: burst mo de; continuous burst; read or write; all banks active, half dqs toggling every cycle. i dd 4 115 95 ma 3, 18, 19, 28 auto refresh current cke = high; cs# = high t rfc = t rfc (min) i dd 5 245 205 ma 3, 12, 18, 19, 28, 29 t rfc = 7.8s i dd 65.05.0ma deep power down i zz 20 20 a
pdf: 09005aef817f1b8c/source: 09005aef818112f1 micron technology, inc., reserves the right to change products or specifications without notice. 512mb mobile sdram_twindie_x32.fm - rev. c 6/05 en 8 ?2004 micron technology, inc. all rights reserved. 512mb : x32 twindie mobile sdram addendum i dd 7 curves i dd 7 curves figure 3: typical self refresh current vs. temperature ? 3.3v part ta bl e 9 : i dd 7 - self refresh current options note: 4; please refer to the 256mb: x32 mobile sdram data sheet for all notes. values for i dd 7 for 85oc are 100 percent tested. valu es for 70oc, 45oc, and 15oc are sampled only. temperature compensated self refresh parameter/condition max temperature v dd = 3.3 v dd = 2.5 v dd = 1.8 units notes self refresh current: cke = low ? 4 bank refresh 85oc 1600 1600 1200 a 4 70oc 1300 1300 960 a 4 45oc 1000 1000 740 a 4 15oc 864 864 630 a 4 self refresh current: cke = low ? 2 bank refresh 85oc 1200 1200 900 a 4 70oc 1025 1025 760 a 4 45oc 875 875 640 a 4 15oc 800 800 580 a 4 self refresh current: cke = low ? 1 bank refresh 85oc 1000 1000 750 a 4 70oc 900 900 660 a 4 45oc 800 800 590 a 4 15oc 760 760 560 a 4 self refresh current: cke = low ? half bank refresh 85oc 900 900 680 a 4 70oc 825 825 610 a 4 45oc 780 780 566 a 4 15oc 750 750 540 a 4 self refresh current: cke = low ? quarter bank refresh 85oc 850 850 640 a 4 70oc 800 800 590 a 4 45oc 760 760 550 a 4 15oc 740 740 536 a 4 0 100 200 300 400 500 6 00 700 800 900 1000 1100 1200 -40 -30 -20 -10 0 10 20 30 40 50 6 07080 temperature ( c ) c urrrent (ua) idd7-- 4-bank idd7-- 2-bank idd7-- 1-bank idd7-- 1/2-bank idd7-- 1/4-bank
pdf: 09005aef817f1b8c/source: 09005aef818112f1 micron technology, inc., reserves the right to change products or specifications without notice. 512mb mobile sdram_twindie_x32.fm - rev. c 6/05 en 9 ?2004 micron technology, inc. all rights reserved. 512mb : x32 twindie mobile sdram addendum i dd 7 curves figure 4: typical self refresh current vs. temperature ? 2.5v part figure 5: typical self refresh current vs. temperature ? 1.8v part table 10: capacitance parameter ? fbga ?s2? package symbol min max units input capacitance: clk c i 1 58pf input capacitance: all other input-only balls c i 2 58pf input/output capacitance: dqs c io 812pf 0 100 200 300 400 500 6 00 700 800 900 1000 1100 1200 -40 -30 -20 -10 0 10 20 30 40 50 6 07080 temperature ( c ) c urrrent (ua) idd7-- 4-bank idd7-- 2-bank idd7-- 1-bank idd7-- 1/2-bank idd7-- 1/4-bank 0 100 200 300 400 500 6 00 700 800 900 1000 -40 -30 -20 -10 0 10 20 30 40 50 6 07080 temperature ( c ) c urrrent (ua) idd7-- 4-bank idd7-- 2-bank idd7-- 1-bank idd7-- 1/2-bank idd7-- 1/4-bank
? 8000 s. federal way, p.o. box 6, boise, id 83707-0006, tel: 208-368-3900 prodmktg@micron.com www.micron.com customer comment line: 800-932-4992 micron, the m logo, and the micron logo are tr ademarks of micron technology, inc. all other trademarks are the prope rty of their respective owners. this data sheet contains minimum and maximum limits specified ov er the complete power supply and temperature range for production devices. althou gh considered final, these specifications are subject to change, as further product development and data characte rization sometimes occur. 512mb : x32 twindie mobile sdram addendum package dimensions pdf: 09005aef817f1b8c/source: 09005aef818112f1 micron technology, inc., reserves the right to change products or specifications without notice. 512mb mobile sdram_twindie_x32.fm - rev. c 6/05 en 10 ?2004 micron technology, inc. all rights reserved. package dimensions figure 6: 90-ball fbga (8mm x 13mm) notes: 1. all dimensions in millimeters. 2. recommended pad size for pcb is 0.4mm 0.025mm. ball a1 id 1.40 max mold compound: epoxy novolac substrate material: plastic laminate solder ball material: 62% sn, 36% pb, 2% ag or 96.5% sn, 3%ag, 0.5% cu solder mask defined ball pads: ?0.40 13.00 0.10 ball a1 ball a9 ball a1 id 0.80 typ 0.80 typ 6.50 0.05 8.00 0.10 4.00 0.05 3.20 5.60 1.00 0.05 seating plane c 11.20 6.40 0.10 c 90x ?0.45 solder ball diameter refers to post reflow condition. the pre- reflow diameter is ?0.42 c l c l
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